symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol units t 10s c/w steady-state c/w steady-state r jl c/w max 62.5 90 40 maximum junction-to-lead c typ 48 74 35 p d junction and storage temperature range parameter r ja maximum junction-to-ambient a maximum junction-to-ambient a t a =70c power dissipation t a =25c a continuous drain current a t a =25c i d t a =70c pulsed drain current b -20 20 4.5 3.6 absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel -2.6 -3.2 thermal characteristics: n-channel and p-channel -55 to 150 -55 to 150 w 2 1.28 2 1.28 20 drain-source voltage 20 gate-source voltage 60 -60 AO4612 n-channel p-channel v ds (v) = 60v -60v i d = 4.5a (v gs =10v) -3.2a (v gs = -10v) r ds(on) r ds(on) < 56m ? (v gs =10v) < 105m ? (v gs = -10v) < 77m ? (v gs =4.5v) < 135m ? (v gs = -4.5v) the AO4612 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used in h-bridge, inverters and other applications. g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 soic-8 g2 d2 s2 g1 d1 s1 n-channel p -channel soic-8 www.freescale.net.cn 1/9 60v complementary enhancement general description mode field effect transistor features
symbol min typ max units bv dss 60 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2.1 3 v i d(on) 20 a 46 56 t j =125c 79 64 77 m w g fs 11 s v sd 0.74 1 v i s 3 a c iss 450 540 pf c oss 60 pf c rss 25 pf r g 1.65 2 w q g (10v) 8.5 10.5 nc q g (4.5v) 4.3 5.5 nc q gs 1.6 nc q gd 2.2 nc t d(on) 4.7 7 ns t r 2.3 4.5 ns gate resistance output capacitance input capacitance diode forward voltage v gs =10v, v ds =30v, r l =6.7 w , w gate source charge gate drain charge turn-on delaytime turn-on rise time v gs =0v, v ds =30v, f=1mhz v gs =0v, v ds =0v, f=1mhz switching parameters reverse transfer capacitance v gs =10v, v ds =5v total gate charge v gs =10v, v ds =30v, i d =4.5a forward transconductance m w v gs =4.5v, i d =3a v ds =5v, i d =4.5a i s =1a,v gs =0v v gs =10v, i d =4.5a gate-body leakage current v ds =0v, v gs = 20v r ds(on) static drain-source on-resistance i dss zero gate voltage drain current gate threshold voltage v ds =v gs i d =250 m a on state drain current drain-source breakdown voltage i d =250 m a, v gs =0v maximum body-diode continuous current dynamic parameters n channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters v ds =48v, v gs =0v m a total gate charge t d(off) 15.7 24 ns t f 1.9 4 ns t rr 27.5 35 ns q rr 32 nc r gen =3 w body diode reverse recovery charge i f =4.5a, di/dt=100a/ m s turn-off delaytime turn-off fall time body diode reverse recovery time i f =4.5a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any a given application depends on the user's speci fic board design. the current rating is based on th e t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. rev3: oct 2010 www.freescale.net.cn 2/9 AO4612 60v complementary enhancement mode field effect transistor
typical electrical and thermal characteristics: n-c hannel 0 5 10 15 20 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 4.0v 10v 5.0v 4.5v 0 5 10 15 2 2.5 3 3.5 4 4.5 5 i d (a) v gs (volts) figure 2: transfer characteristics 20 30 40 50 60 70 80 90 100 0 5 10 15 20 r ds(on) (m w w w w ) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance v gs =10v v gs =4.5v i d =3.0a i d =4.5a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 4.0v 10v 5.0v 4.5v 0 5 10 15 2 2.5 3 3.5 4 4.5 5 i d (a) v gs (volts) figure 2: transfer characteristics 20 30 40 50 60 70 80 90 100 0 5 10 15 20 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v v gs =4.5v i d =3.0a i d =4.5a 40 60 80 100 120 140 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =4.5a 25 c 125 c www.freescale.net.cn 3/9 AO4612 60v complementary enhancement mode field effect transistor
typical electrical and thermal characteristics: n-c hannel 0 2 4 6 8 10 0 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 0 10 20 30 40 50 60 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) c oss c rss 0.0 0.1 1.0 10.0 100.0 0.1 1 10 100 i d (amps) 10ms 1ms 0.1s 1s 10s dc t j(max) =150 c t a =25 c r ds(on) v ds =30v i d = 4.5a t j(max) =150 c t a =25 c 10 m s 0 2 4 6 8 10 0 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 0 10 20 30 40 50 60 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance c oss c rss 0.0 0.1 1.0 10.0 100.0 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note e) 10ms 1ms 0.1s 1s 10s dc t j(max) =150 c t a =25 c r ds(on) v ds =30v i d = 4.5a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t a =25 c 10 m s www.freescale.net.cn 4/9 AO4612 60v complementary enhancement mode field effect transistor
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 5/9 AO4612 60v complementary enhancement mode field effect transistor
symbol min typ max units bv dss -60 v -1 t j =55c -5 i gss 100 na v gs(th) -1 -2.1 -3 v i d(on) -20 a 84 105 t j =125c 145 106 135 m w g fs 9 s v sd -0.73 -1 v i s -3 a c iss 930 1120 pf c oss 85 pf c rss 35 pf r g 7.2 9 w q g (10v) 16 20 nc q g (4.5v) 8 10 nc q gs 2.5 nc q gd 3.2 nc t d(on) 8 12 ns drain-source breakdown voltage i d =-250 m a, v gs =0v i dss zero gate voltage drain current v ds =-48v, v gs =0v p-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters m a gate threshold voltage v ds =v gs i d =-250 m a on state drain current v gs =-10v, v ds =-5v gate-body leakage current v ds =0v, v gs =20v diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current output capacitance m w v ds =-5v, i d =-3.2a r ds(on) static drain-source on-resistance forward transconductance v gs =-10v, i d =-3.2a v gs =-4.5v, i d =-2.8a reverse transfer capacitance gate resistance dynamic parameters input capacitance v gs =0v, v ds =-30v, f=1mhz v gs =0v, v ds =0v, f=1mhz total gate charge (4.5v) gate source charge gate drain charge switching parameters total gate charge (10v) v gs =-10v, v ds =-30v, i d =-3.2a turn-on delaytime t d(on) 8 12 ns t r 3.8 7.5 ns t d(off) 31.5 48 ns t f 7.5 15 ns t rr 27 35 ns q rr 32 nc body diode reverse recovery charge i f =-3.2a, di/dt=100a/ m s turn-on delaytime v gs =-10v, v ds =-30v, r l =9.4 w , r gen =3 w turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-3.2a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any a given application depends on the user's specific board design. the current rating i s based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any a given application depends on the use r's specific board design. the current rating is ba sed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. www.freescale.net.cn 6/9 AO4612 60v complementary enhancement mode field effect transistor
typical electrical and thermal characteristics: p-c hannel 0 5 10 15 20 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics v gs =-3.0v -3.5v -4.5v -10v -4.0v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 -i d (a) -v gs (volts) figure 2: transfer characteristics 70 80 90 100 110 120 130 r ds(on) (m w w w w ) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance v gs =-10v v gs =-4.5v 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v i d =-3.2a i d =-2.8a 0 5 10 15 20 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics v gs =-3.0v -3.5v -4.5v -10v -4.0v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 -i d (a) -v gs (volts) figure 2: transfer characteristics 70 80 90 100 110 120 130 0 2 4 6 8 10 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =-10v v gs =-4.5v 60 80 100 120 140 160 180 200 2 3 4 5 6 7 8 9 10 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v i d =-3.2a 25 c 125 c i d =-3.2a i d =-2.8a www.freescale.net.cn 7/9 AO4612 60v complementary enhancement mode field effect transistor
typical electrical and thermal characteristics: p-c hannel 0 2 4 6 8 10 0 4 8 12 16 20 -v gs (volts) -q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 10 20 30 40 50 60 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 power (w) c oss c rss 0.0 0.1 1.0 10.0 100.0 0.1 1 10 100 -i d (amps) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150 c t a =25 c v ds =-30v i d =-3.2a t j(max) =150 c t a =25 c 0 2 4 6 8 10 0 4 8 12 16 20 -v gs (volts) -q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 10 20 30 40 50 60 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance c oss c rss 0.0 0.1 1.0 10.0 100.0 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150 c t a =25 c v ds =-30v i d =-3.2a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t a =25 c www.freescale.net.cn 8/9 AO4612 60v complementary enhancement mode field effect transistor
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v unclamped inductive switching (uis) test circuit & waveforms vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) www.freescale.net.cn 9/9 AO4612 60v complementary enhancement mode field effect transistor
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